HVM14SR silicon epitaxial planar pin diode for high frequency attenuator ade-208-084c(z) rev. 3 feb. 1999 features ? low forward resistance. (rf =7.0 ? max) ? low capacitance. (c=0.25pf typ) ? mpak package is suitable for high density surface mounting and high speed assembly. ordering information type no. laser mark package code HVM14SR h7 mpak outline 1 anode 1 2 cathode 2 3 cathode 1 anode 2 (top view) 2 1 3
HVM14SR rev.3, feb. 1999, page 2 of 5 absolute maximum ratings (ta = 25c) item symbol value unit reverse voltage v r 50 v forward current i f 50 ma power dissipation p d *1 100 mw junction temperature tj 125 c storage temperature tstg -55to+125 c note: 1. two device total. electrical characteristics *2 (ta = 25c) item symbol min typ max unit test condition forward voltage v f ?? 1.0 v i f = 50 ma reverse current i r ?? 100 na v r = 50v capacitance c ? 0.25 ? pf v r = 50v, f = 1 mhz forward resistance r f ?? 7 ? i f = 10 ma, f = 100 mhz esd-capability *1 ? 200 ?? v c=200pf, both forward and reverse direction 1 pulse note: 1. failure criterion ; i r 200na at vr =50 v note: 2. per one device.
HVM14SR rev.3, feb. 1999, page 3 of 5 main characteristic 0 0.2 0.4 0.6 0.8 1.0 10 10 -5 10 -7 10 -9 10 -11 10 -1 -3 forward voltage v f (v) forward current i f (a) reverse voltage v r (v) fig.1 forward current vs. forward voltage fig.2 reverse current vs. reverse voltage reverse current i r (a) capacitance c (pf) fig.3 capacitance vs. reverse voltage reverse voltage v r (v) forward current i (a) f forward resistance r ( ) f ? fig.4 forward resistance vs. forward current 010 40 10 10 -12 10 -11 -10 30 20 50 10 -9 10 -8 10 10 10 10 1.0 2 1.0 -1 f=1mhz 10 10 10 10 1.0 10 10 10 3 2 -5 -4 -3 -2 10 4 f=100mhz
HVM14SR rev.3, feb. 1999, page 4 of 5 package dimensions unit : mm 0.16 0 ? 0.10 + 0.10 ? 0.06 0.4 + 0.10 ? 0.05 0.95 0.95 1.9 2.8 + 0.3 ? 0.1 2.8 + 0.2 ? 0.6 0.65 + 0.1 ? 0.3 1.5 0.65 + 0.1 ? 0.3 1.1 + 0.2 ? 0.1 0.3 h 7 laser mark 21 3 hitachi code jedec code eiaj code weight (g) mpak(1) ? sc-59a 0.011 1 anode 1 2 cathode 2 3 cathode 1 anode 2
HVM14SR rev.3, feb. 1999, page 5 of 5 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra ? e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 4.0
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